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A set of electronic instrumentation was configured to perform measurements of resistivity and Hall coefficient based on the four-point van der Pauw technique. Measurements were performed on silicon wafers and vanadium dioxide thin films. The abrupt change in resistivity at the critical semiconductor to metal transition temperature, by up to five orders of magnitude, was verified for VO2 thin films grown by Pulsed Laser Deposition on sapphire substrate, and lower for films grown on MgO and glass substrates. For the sample grown on sapphire other transport properties, obtained through Hall effect measurements, were determined.
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